1200V HIGH SIDE GATE DRIVER

Notwithstanding any terms to the contrary in any non-disclosure agreements between the Parties, Licensee shall treat this Agreement and the Content as ON Semiconductor’s “Confidential Information” including: Learn more about our comprehensive gate driver portfolio with a variety of configurations, voltage classes, isolation levels, protection features, and package options. Please allow business days for a response. You will receive an email when your request is approved. Your inquiry will be sent to the appropriate specialist who will be in touch with you as soon as possible. Licensee shall not distribute externally or disclose to any Customer or to any third party any reports or statements that directly compare the speed, functionality or other performance results or characteristics of the Software with any similar third party products without the express prior written consent of ON Semiconductor in each instance; provided, however, that Licensee may disclose such reports or statements to Licensee’s consultants i that have a need to have access to such reports or statements for purposes of the license grant of this Agreement, and ii that have entered into a written confidentiality agreement with Licensee no less restrictive than that certain NDA.

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Matched Propagation Delay Below 50 ns. It is designed and produced in our internal wafer fabrication facility on the proven advanced SOI process”, Commented Dr. The term of this agreement is perpetual unless terminated by ON Semiconductor as set forth herein.

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Request for this document already exists and is waiting for approval. The output propagation delays are matched for use in high-frequency applications. This video demonstrates the advantages of products with Infineon SOI. You will receive an email when your request is approved. You agree to the usage of gatr when you continue browsing this site. Typical applications include motor drives, high-voltage inverters, uninterrupted power supplies UPSand dc-dc converters.

V High Voltage High and Low Side Driver – BMFV-C | ROHM Semiconductor – ROHM Co., Ltd.

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Integrated bootstrap diode, Low level-shift losses – saving space and cost. This might also be of interest for you. You will receive a confirmation E-mail to validate your address in our system.

At a hlgh such license agreement shall safeguard ON Semiconductor’s ownership rights to the Software. Licensee shall not distribute externally or disclose to any Customer or to any third party any reports or statements that directly compare the speed, functionality or other performance results or characteristics of the Software with any similar third party products without the express prior written consent of ON Semiconductor in each instance; provided, however, that Licensee may disclose such reports or statements to Licensee’s consultants i that have a need to have access to such reports or statements for purposes of the license grant of this Agreement, and ii that have entered into a written confidentiality agreement with Licensee no less restrictive than that certain NDA.

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High Side Drivers – Infineon Technologies

The IXB is available in production quantities. The parties hereto are for all purposes of this Agreement independent contractors, and neither shall hold itself out as having any authority to act as an agent or partner of the other party, or in any way bind or commit the other party to any obligations. Licensee agrees that it has received a copy of the Content, including Software i.

Wireless Power Published 1 day ago. Your inquiry will be sent to the appropriate specialist who will be in touch with you as soon as possible.

Internal under voltage lockout circuitry for both the high-side and low-side outputs prevents the IXB from turning on the discrete power IGBTs until there is sufficient gate voltage. An Introduction to Infineon Gate Drivers. This Agreement may be executed in counterparts, each of which shall be deemed to be an original, and which together shall constitute one and the same agreement.

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